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| SMD Type Silicon Schottky Barrier Diode HSM88AS Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Proof against high voltage. MPAK package is suitable for high density surface mounting and high speed assembly. +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a r a m e te r R e v e r s e v o lta g e A v e r a g e r e c tifie d c u r r e n t J u n c tio n te m p e r a tu r e S to r a g e te m p e r a tu r e S ym bol VR IO Tj T s tg V a lu e 10 15 125 - 5 5 to + 1 2 5 U n it V mA Electrical Characteristics Ta = 25 Parameter Forward voltage Symbol VF Conditions IF = 1 mA IF = 10 mA Reverse current Capacitance Capacitance deviation Forward voltage deviation ESD-Capability (Note 1) Note 1. Failure criterion ; IR 400nA at VR =2 V IR C AC AVF VR = 2 V VR = 10 V VR =0 V, f = 1 MHz VR =0 V, f = 1 MHz IF = 10 mA C=200pF , Both forward and reverse direction 1 pulse. 30 Min 350 500 Typ Max 420 580 0.2 10 0.85 0.10 10 A pF pF mV V Unit mV Marking Marking C1 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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